SI7625DN-T1-GE3 Vishay, SI7625DN-T1-GE3 Datasheet - Page 4

P-CHANNEL 30-V (D-S) MOSFET

SI7625DN-T1-GE3

Manufacturer Part Number
SI7625DN-T1-GE3
Description
P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7625DN-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
126nC @ 10V
Input Capacitance (ciss) @ Vds
4427pF @ 15V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Gate Charge Qg
84.5 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0056 Ohms
Forward Transconductance Gfs (max / Min)
47 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3 A
Power Dissipation
3.7 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7625DN-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7625DN-T1-GE3
Manufacturer:
VISHAY
Quantity:
243
Part Number:
SI7625DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7625DN-T1-GE3
0
Company:
Part Number:
SI7625DN-T1-GE3
Quantity:
95
Si7625DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.1
- 0.4
0.01
100
0.8
0.5
0.2
0.1
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
- Source-to-Drain Voltage (V)
0
Threshold Voltage
T
T
0.4
J
J
- Temperature (°C)
= 150 °C
25
0.6
50
75
0.01
100
0.1
0.8
T
10
I
1
0.01
J
D
I
= 25 °C
D
= 5 mA
100
Limited by R
= 250 μA
* V
1.0
GS
125
> minimum V
V
Single Pulse
T
0.1
DS
A
DS(on)
1.2
150
Safe Operating Area
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
DS(on)
0.030
0.024
0.018
0.012
0.006
0.000
10
100
80
60
40
20
is specified
0
0
0
I
0 .
D
On-Resistance vs. Gate-to-Source Voltage
0
= 15 A
1
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
T
J
100
2
V
= 25 °C
GS
0.01
- Gate-to-Source Voltage (V)
4
Pulse (s)
T
J
S10-0638-Rev. A, 22-Mar-10
0.1
= 125 °C
Document Number: 65737
6
1
8
10
1
0

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