SI9933CDY-T1-GE3 Vishay, SI9933CDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI9933CDY-T1-GE3
• Description: DUAL P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI9933CDY-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 50 C
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI9933CDY-T1-GE3TR

Si9933CDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.1
10
- 50
1
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
T
= 150 °C
0.4
J
25
- Temperature (°C)
50
0.6
75
0.01
100
0.8
0.1
10
1
I
0.1
D
100
= 250 µA
Safe Operating Area, Junction-to-Ambient
T
* V
J
Single Pulse
Limited by R
= 25 °C
T
1.0
GS
A
125
= 25 °C
> minimum V
V
New Product
DS
150
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0
0
is specified
0 .
0
1 ms
10 ms
100 ms
1 s
10 s
DC
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
6
S-81729-Rev. A, 04-Aug-08
Document Number: 68791
8
I
1
D
T
J
= - 4.8 A
T
J
= 25 °C
10
= 125 °C
12
10