SI9933CDY-T1-GE3 Vishay, SI9933CDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI9933CDY-T1-GE3
• Description: DUAL P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI9933CDY-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 50 C
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI9933CDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68791
S-81729-Rev. A, 04-Aug-08
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
8
6
4
2
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
Package Limited
25
New Product
T
150
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si9933CDY
100
www.vishay.com
125
150
5