ST103S08PFN1 Vishay, ST103S08PFN1 Datasheet - Page 2

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ST103S08PFN1

Manufacturer Part Number
ST103S08PFN1
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
Manufacturer
Vishay
Datasheet

Specifications of ST103S08PFN1

Breakover Current Ibo Max
3150 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.73 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST103SP Series
Document Number: 94365
Bulletin I25217 09/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Current Carrying Capability
On-state Conduction
I
I
I
I
I
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
ST103S
T(AV)
T(RMS)
TSM
2
2
Type number
Frequency
t
√t
Parameter
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Voltage
2
2
Code
t for fusing
√t for fusing
04
08
repetitive peak voltage
V
280
310
320
340
DRM
50
50
60
22Ω / 0.15µF
180
/V
o
V
el
RRM
DRM
400
800
V
, maximum
Values
3000
3150
2530
2650
105
165
450
85
45
41
32
29
180
200
200
210
I
50
50
85
TM
Units Conditions
KA
KA
°C
440
470
480
490
A
A
50
60
22Ω / 0.15µF
2
-
2
√s
s
180
V
non-repetitive peak voltage
o
t = 10ms
t = 8.3ms
180° conduction, half sine wave
DC @ 76°C case temperature
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 0.1 to 10ms, no voltage reapplied
el
DRM
I
V
TM
330
300
310
320
50
85
RSM
-
, maximum
500
900
No voltage
100% V
reapplied
No voltage
reapplied
reapplied
100% V
reapplied
V
4730
2500
1530
840
RRM
RRM
50
60
22Ω / 0.15µF
-
100µs
V
DRM
Sinusoidal half wave,
Initial T
I
www.vishay.com
TM
3630
1850
1090
580
J
I
50
85
DRM
@ T
-
= T
J
/I
J
max
RRM
= T
mA
30
J
Units
A/µs
max.
max.
°C
V
A
2

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