ST103S08PFN1 Vishay, ST103S08PFN1 Datasheet - Page 9

• Manufacturer Part Number: ST103S08PFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S08PFN1

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Document Number: 94365
100
0.1
10
0.001
1
R ectangular gate pulse
a) Recommended load line for
b) R ecommended load line for
tr<=1 µs
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
This product has been designed and qualified for Industrial Level and Lead-Free.
0.01
VGD
IGD
Device: S T 103S S eries
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
0.1
Data and specifications subject to change without notice.
(b)
Qualification Standards can be found on IR's Web site.
(a)
1
Frequency Limited by PG(AV)
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
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(1)
(2)
TAC Fax: [phone]
(3)
Bulletin I25217 09/05
ST103SP Series
(4)
100
www.vishay.com
09/05
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