ST103S08PFN1 Vishay, ST103S08PFN1 Datasheet - Page 5

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ST103S08PFN1

Manufacturer Part Number
ST103S08PFN1
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
Manufacturer
Vishay
Datasheet

Specifications of ST103S08PFN1

Breakover Current Ibo Max
3150 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.73 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 94365
Outline Table
130
120
110
100
90
80
CERAMIC HOUSING
0 10 20 30 40 50 60 70 80 90 100110
Fig. 1 - Current Ratings Characteristics
RED SILICON RUBBER
Average On-state Current (A)
S T 103S S eries
R
thJC
RED CATHODE
8.5 (0.33) DIA.
RED SHRINK
30°
(DC) = 0.195 K/ W
60°
16.5 (0.65) MAX.
Conduc tion Angle
29.5 (1.16)
MAX.
90°
1/2"-20UNF-2A
120°
WHITE SHRINK
22.5 (0.88) MAX. DIA.
WHITE GATE
180°
215 (8.46)
SW 27
C.S. 0.4 mm 2
(.0006 s.i.)
4.3 (0.17) DIA
10 (0.39)
FLEXIBLE LEAD
C.S. 16mm 2
(.025 s.i.)
All dimensions in millimeters (inches)
Case Style TO-209AC (TO-94)
2.6 (0.10) MAX.
130
120
110
100
90
80
70
0
20 40 60 80 100 120 140 160 180
Fig. 2 - Current Ratings Characteristics
Average On-state Current (A)
30°
S T 103S S eries
R
Fast-on Terminals
thJC
AMP. 280000-1
60°
REF-250
Bulletin I25217 09/05
ST103SP Series
90°
(DC) = 0.195 K/ W
120°
Conduction Period
www.vishay.com
180°
DC
5

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