SUD50N03-11-E3 Vishay, SUD50N03-11-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-11-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,50A I(D),TO-252AA
• Manufacturer: Vishay

Specifications of SUD50N03-11-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 7500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71187
S-31724—Rev. C, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2000
1600
1200
200
160
120
800
400
80
40
60
50
40
30
20
10
0
0
0
0
0
0
T
C
C
5
rss
20
= - 55_C
2
V
V
DS
DS
Output Characteristics
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
I
Transconductance
D
10
- Drain Current (A)
Capacitance
40
V
4
GS
= 10 thru 8 V
C
15
oss
7 V
60
6
20
80
8
C
125_C
25
25_C
iss
6 V
5 V
4 V
3 V
2 V
100
10
30
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
10
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 50 A
On-Resistance vs. Drain Current
1
= 15 V
20
V
4
GS
Q
Transfer Characteristics
V
g
GS
- Gate-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
2
= 4.5 V
- Drain Current (A)
Gate Charge
40
8
T
C
Vishay Siliconix
3
SUD50N03-11
= - 55_C
60
12
V
GS
4
= 10 V
125_C
80
16
www.vishay.com
5
25_C
100
20
6
3