SUD50N03-11-E3 Vishay, SUD50N03-11-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-11-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,50A I(D),TO-252AA
• Manufacturer: Vishay

Specifications of SUD50N03-11-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 7500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N03-11
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
THERMAL RATINGS
0.01
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
0.1
0
2
1
- 50
0
10
On-Resistance vs. Junction Temperature
V
I
-4
- 25
Maximum Avalanche Drain Current vs.
Duty Cycle = 0.5
0.2
0.1
D
GS
25
= 25 A
= 10 V
Single Pulse
T
0
J
T
0.05
50
C
- Junction Temperature (_C)
Case Temperature
0.02
- Case Temperature (_C)
25
75
50
10
-3
75
100
100
Normalized Thermal Transient Impedance, Junction-to-Case
125
125
150
150
10
-2
175
175
Square Wave Pulse Duration (sec)
10
-1
100
10
500
100
0.1
1
10
1
0
0.1
Source-Drain Diode Forward Voltage
by r
Limited
DS(on)
0.3
V
T
SD
V
J
DS
= 150_C
1
- Source-to-Drain Voltage (V)
Single Pulse
T
Safe Operating Area
- Drain-to-Source Voltage (V)
C
1
= 25_C
0.6
S-31724—Rev. C, 18-Aug-03
0.9
Document Number: 71187
T
J
10
= 25_C
10
1.2
10 ms
100 ms
10 ms
100 ms
1 s
dc
30
1.5
100