AMMP-6408-BLKG Avago Technologies US Inc., AMMP-6408-BLKG Datasheet - Page 2

• Manufacturer Part Number: AMMP-6408-BLKG
• Description: Power Amp, MMIC, 6-18GHz Pkg
• Manufacturer: Avago Technologies US Inc.

Specifications of AMMP-6408-BLKG

• Current - Supply: 650mA
• Frequency: 6GHz ~ 18GHz
• Gain: 18dB
• P1db: 28.5dBm
• Package / Case: 8-SMD
• Rf Type: LMDS, MMDS
• Test Frequency: 8GHz
• Voltage - Supply: 6V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Symbol
V
V
I
P
P
T
T
T
Notes:
. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operating at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET.
5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
DC Specifications/Physical Properties
Symbol
I
V
R
T
Note:
6. Assume SnPb soldering to an evaluation RF board at 80°C base plate temperatures. Worst case for the channel temperature is under the
RF Specifications
T
Symbol
Freq.
Gain
P
P
OIP
RLin
RLout
Isolation
Notes:
. Small/large-signal data measured in packaged form on a 2.4 mm connecter based evaluation board at T
2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies.
3. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
4. Preassembly into package performance verified 00% on-wafer published specifications at frequencies = 7, 2, and 7 GHz.
2
d
d
ch, max
stg
max
ch
A
d
D
in
qjc
-dB
-3dB
g
g
maintained at the lowest possible levels.
quiescent operation. At saturated output power, DC power consumption rises to 4.26 W with .4 W RF power delivered to load. Power
dissipation is 3. W and the temperature rise in the channel is 68.4°C. In this condition, the base plate temperature must be remained below
86.6°C to maintain maximum operating channel temperature below 55°C.
= 25°C, V
narrower bandwidth by application of additional conjugate, linearity, or power matching.
3
d
Parameters and Test Conditions
Operational Frequency
Small-Signal Gain S2
Output Power at  dB
Gain Compression
Output Power at 3 dB Gain Compression
Third Order Intercept Point;
∆f = 00 MHz; Pin = -20 dBm
Input Return Loss
Output Return Loss
Reverse Isolation
= 5 V, Id
Parameters
Positive Supply Voltage
Gate Supply Voltage
Drain Current
Power Dissipation
CW Input Power
Maximum Operating Channel Temperature
Storage Case Temperature
Maximum Assembly Temp (20 sec. max.)
[1,2,3,4]
Parameters and Test Conditions
Drain Supply Current (V
Gate Supply Operating Voltage (I
Thermal Resistance
Channel Temperature
(Q)
= 650 mA, Z
[1]
[2]
[1]
[2]
[2]
[3]
[3,4]
o
[6]
= 50 Ω
(Channel-to-Base Plate)
d
= 5 V, V
[3]
g
d(Q)
set for I
= 650 (mA))
d
Typical)
Units
GHz
dB
dBm
dBm
dBm
dB
dB
dB
Units
V
V
mA
W
dBm
°C
°C
°C
Minimum
6
7.5 (@ Freq = 8 GHz)
5.5 (@ Freq = 7 GHz)
28 (@ Freq = 8 GHz)
27 (@ Freq = 7 GHz)
Value
6
-3 to 0.5
900
4.6
23
+55
-65 to +55
+260
Units
mA
V
°C/W
°C
A
= 25°C.
Typical
8
28.5
29.5
38
3
9
45
Value
650
-.
20
50.6
Notes
note 2
note 2,3
note 2
note 4,5
Maximum
8