SI4936CDY-T1-E3 Vishay, SI4936CDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4936CDY-T1-E3
• Description: MOSFET 2N-CH 30V 5.8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4936CDY-T1-E3

• Input Capacitance (ciss) @ Vds: 325pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Power - Max: 2.3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
0.06
0.05
0.04
0.03
0.02
20
15
10
10
5
0
8
6
4
2
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
= 5 A
1
0.5
V
DS
Output Characteristics
V
5
Q
DS
- Drain-to-Source Voltage (V)
g
I
D
= 15 V
- Total Gate Charge (nC)
2
Gate Charge
- Drain Current (A)
1.0
V
V
GS
GS
= 4.5 V
10
= 10 V
3
V
1.5
GS
= 10 V thru 4 V
V
4
DS
V
V
15
GS
GS
= 24 V
2.0
= 1 V, 2 V
= 3 V
5
New Product
2.5
20
6
400
300
200
100
1.7
1.5
1.3
1.1
0.9
0.7
5
4
3
2
1
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
5
V
V
DS
Transfer Characteristics
1
0
GS
T
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
T
C
T
25
Capacitance
C
C
= 125 °C
C
oss
= 25 °C
iss
V
GS
15
50
2
Vishay Siliconix
= 10 V; I
75
Si4936CDY
20
D
V
I
D
100
= 5 A
GS
T
3
= 4.7 A
www.vishay.com
C
= 4.5 V;
= - 55 °C
25
125
150
30
4
3