SI4936CDY-T1-E3 Vishay, SI4936CDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4936CDY-T1-E3
• Description: MOSFET 2N-CH 30V 5.8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4936CDY-T1-E3

• Input Capacitance (ciss) @ Vds: 325pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Power - Max: 2.3W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
8
6
4
2
0
100
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
25
New Product
T
150
C
50
Current Derating*
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
125
0
150
25
Power, Junction-to-Ambient
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
Si4936CDY
100
www.vishay.com
125
150
5