KIT34844AEPEVBE Freescale Semiconductor, KIT34844AEPEVBE Datasheet - Page 37

• Manufacturer Part Number: KIT34844AEPEVBE
• Description: LED Lighting Development Kits IC, 10 CHANNEL LED BACKLIGHT
• Manufacturer: Freescale Semiconductor

Specifications of KIT34844AEPEVBE

• Supply Voltage: 12 V
• Supply Current: 2 uA
• For Use With/related Products: 34844A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11. Static and Dynamic Electrical Characteristics
Analog Integrated Circuit Device Data
Freescale Semiconductor
SUPPLY
BOOST
Notes
Supply Voltage
Supply Current when Shutdown Mode
Supply Current when Sleep Mode
Supply Current when Operational Mode
Under-voltage Lockout (V
Under-voltage Hysteresis (V
VDC1 Voltage
C
VDC2 Voltage
C
VDC3 Voltage
C
Output Voltage Range
Boost Switch Current Limit
Boost Switch Current Limit Timeout
RDSON of Internal FET (I
Boost Switch Off-state Leakage Current
V
Feedback pin Off-state Leakage Current (V
Peak Boost Efficiency
18.
19.
20.
Characteristics noted under conditions V
-40°C ≤ T
SWA,SWB
VDC1
VDC2
VDC3
Manual: PWM = Low, EN = Low, SCK&SDA=Low
SM Bus: EN bit = 0, SCK&SDA=Low, EN pin= Low
I
SM-Bus: EN = low, SCK & SDA= Active, SETI2C bit = 0, EN bit = 0
I
Manual: EN= High, SCK & SDA=Low, PWM=Low
SM-Bus: EN= Low, SCK & SDA=Active, EN bit= 1, PWM=Low
I
VIN = 7.0 V
VIN = 28 V
2
2
2
C: SETI2Cbit=1, CLRI2C=0, EN bit= 0, EN pin=Low
C: EN = High, SETI
C: EN = High, SETI
This output is for internal use only and not to be used for other purposes
Minimum and Maximum output voltages are dependent on Min/Max duty cycle and current limit condition.
Guaranteed by design
= 2.2 μF
= 2.2 μF
= 2.2 μF
= 65 V
A
≤ 105°C, PGND = 0 V, unless otherwise noted.
(18)
(18)
(18)
(20)
(20)
(19)(20)
2
2
C bit = 1, CLRI
C bit = 1, CLRI
IN
DRAIN
Characteristic
Rising)
IN
Falling)
STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS
= 1.0 A)
2
2
C bit = 0, EN bit = 1, PWM=Low
C bit = 0, EN bit = 0
OUT
IN
= 65 V )
= 12 V, V
OUT
= 42 V, PWM = VDC1, M/~S = VDC1, PIN & NIN = VDC1,
I
I
OPERATIONAL
t
I
BOOST_LEAK
UVLO
BOOST_TIME
VOUT
EFF
SHUTDOWN
Symbol
R
I
V
V
UVLO
SLEEP
V
V
V
I
DSON
V
OUT1
OUT2
FET
STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS
DC1
DC2
DC3
BOOST
IN
HYST
LEAK
Min
7.0
5.4
2.3
5.5
2.3
8.0
2.3
32
-
-
-
-
-
-
-
-
-
-
ELECTRICAL CHARACTERISTICS
13.0
Typ
300
250
500
2.0
4.0
6.0
2.5
6.0
2.5
2.5
12
17
10
90
-
-
-
Max
2.75
2.75
500
700
6.4
6.5
2.7
28
28
60
10
-
-
-
-
-
-
-
Unit
mΩ
μ
mA
mA
mV
μ
μ
ms
%
34844A
V
V
V
V
V
V
A
A
A
A
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