SI1431DH-T1-E3 Vishay, SI1431DH-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1431DH-T1-E3
• Description: MOSFET N-CH 30V SOT363
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1431DH-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 3V @ 100µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si1431DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.3
- 0.6
0.9
0.6
0.3
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.02
0.2
0.1
0.05
0
Single Pulse
Threshold Voltage
T
J
25
- Temperature (°C)
10
-3
I
50
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
0.1
10
100
10
1
0.1
-2
* V
Limited by
R
GS
125
(DS)on
Single Pulse
> minimum V
T
A
V
*
= 25 °C
150
DS
Square Wave Pulse Duration (s)
-
Safe Operating Area
Drain-to-Source Voltage (V )
10
1
-1
GS
at which R
DS(on)
10
35
28
21
14
1
0.001
7
0
is specified
Single Pulse Power, Junction-to-Ambient
10 µs
100 µs
100 s, DC
100 ms
1 s, 10 s
1 ms
10 ms
0.01
100
T
A
= 25 °C
10
0.1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
A
t
1
S10-0646-Rev. B, 22-Mar-10
= P
1
t
2
Document Number: 72694
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 105°C/W
100
600
1000