SI1431DH-T1-E3 Vishay, SI1431DH-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1431DH-T1-E3
• Description: MOSFET N-CH 30V SOT363
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1431DH-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 3V @ 100µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72694.
Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si1431DH
www.vishay.com
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