SUD50N02-06-E3 Vishay, SUD50N02-06-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N02-06-E3
• Description: MOSFET P-CH D-S 20V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N02-06-E3

• Input Capacitance (ciss) @ Vds: 6600pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Power - Max: 100W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 71136
S-31724—Rev. C, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10000
8000
6000
4000
2000
250
200
150
100
160
120
50
80
40
0
0
0
0
0
0
C
rss
T
C
= - 55_C
20
2
V
4
V
DS
DS
Output Characteristics
I
V
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
D
Transconductance
GS
- Drain Current (A)
= 4.5, 4 V
Capacitance
40
4
8
C
C
1 V
oss
iss
60
12
6
80
16
8
3.5 V
2.5 V
1.5 V
125_C
25_C
3 V
2 V
100
10
20
0.010
0.008
0.006
0.004
0.002
0.000
120
100
80
60
40
20
12
0
9
6
3
0
0.0
0
0
V
I
D
DS
= 50 A
V
0.5
On-Resistance vs. Drain Current
= 10 V
GS
20
30
V
GS
= 2.5 V
Q
Transfer Characteristics
g
- Gate-to-Source Voltage (V)
25_C
I
T
1.0
D
- Total Gate Charge (nC)
C
- Drain Current (A)
= 125_C
Gate Charge
40
60
Vishay Siliconix
1.5
SUD50N02-06
60
90
2.0
V
GS
- 55_C
= 4.5 V
120
www.vishay.com
80
2.5
100
150
3.0
3