SUD50N02-06-E3 Vishay, SUD50N02-06-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N02-06-E3
• Description: MOSFET P-CH D-S 20V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N02-06-E3

• Input Capacitance (ciss) @ Vds: 6600pF @ 20V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 30A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Power - Max: 100W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N02-06
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
THERMAL RATINGS
0.01
2.0
1.6
1.2
0.8
0.4
0.0
0.1
40
32
24
16
8
0
2
1
10
- 50
0
-4
On-Resistance vs. Junction Temperature
V
I
- 25
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
D
GS
Maximum Avalanche Drain Current
25
= 30 A
Single Pulse
= 4.5 V
T
0
vs. Ambient Temperature
J
T
50
A
- Junction Temperature (_C)
- Case Temperature (_C)
25
10
-3
75
50
75
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
125
10
125
-2
150
150
Square Wave Pulse Duration (sec)
175
175
10
-1
1000
0.01
100
1
100
0.1
10
10
1
1
0.1
0
by r
Limited
Source-Drain Diode Forward Voltage
DS(on)
V
T
0.3
V
DS
J
SD
= 150_C
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
- Source-to-Drain Voltage (V)
A
Notes:
P
1
= 25_C
DM
JM
- T
0.6
A
t
1
= P
t
2
DM
S-31724—Rev. C, 18-Aug-03
Z
thJA
0.9
thJA
Document Number: 71136
100
10
t
t
(t)
1
2
T
= 40_C/W
J
= 25_C
1.2
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
10 s
100 s
dc
600
100
1.5