PMBTA13 T/R NXP Semiconductors, PMBTA13 T/R Datasheet - Page 2

• Manufacturer Part Number: PMBTA13 T/R
• Description: Darlington Transistors TRNS DARLINGTN TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PMBTA13 T/R

• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 5000
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMBTA13,215

NXP Semiconductors
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 30 V)
• High DC current gain (min. 10 000).
APPLICATIONS
• High input impedance preamplifiers.
DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package.
PNP complement: PMBTA64.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 22
PMBTA13
PMBTA14
PMBTA13
PMBTA14
NUMBER
NPN Darlington transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
NAME
−
plastic surface mounted package; 3 leads
MARKING CODE
*1M
*1N
(1)
DESCRIPTION
2
PACKAGE
PINNING
handbook, halfpage
PIN
Top view
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
1
base
emitter
collector
3
PMBTA13; PMBTA14
2
DESCRIPTION
Product data sheet
1
TR1
VERSION
SOT23
MAM298
TR2
3
2