PMBTA13,215 NXP Semiconductors, PMBTA13,215 Datasheet

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DATA SHEET PMBTA13; PMBTA14 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 29 DISCRETE SEMICONDUCTORS 2004 Jan 22 ...

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... NXP Semiconductors NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max • High DC current gain (min. 10 000). APPLICATIONS • High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP complement: PMBTA64. MARKING TYPE NUMBER ...

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... NXP Semiconductors NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC total power dissipation tot T storage temperature ...

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... NXP Semiconductors NPN Darlington transistors 80000 handbook, full pagewidth h FE 60000 40000 20000 0 − 2004 Jan Fig.2 DC current gain; typical values. 4 Product data sheet PMBTA13; PMBTA14 MGD837 (mA) ...

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... NXP Semiconductors NPN Darlington transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...