RN2970FS(TPL3) Toshiba, RN2970FS(TPL3) Datasheet

no-image

RN2970FS(TPL3)

Manufacturer Part Number
RN2970FS(TPL3)
Description
Digital Transistors -50mA -20volts 6Pin 4.7Kohms
Manufacturer
Toshiba
Datasheet

Specifications of RN2970FS(TPL3)

Transistor Polarity
PNP
Mounting Style
SMD/SMT
Continuous Collector Current
- 50 mA
Power Dissipation
50 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
Electrical Characteristics
Note: Total rating
Two devices are incorporated into a fine pitch Small Mold (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Complementary to RN1970FS, RN1971FS
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
B
R1
Characteristics
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
C
E
RN2970FS,RN2971FS
(Ta = 25°C) (Q1, Q2 common)
RN2970FS
RN2971FS
(Ta = 25°C) (Q1, Q2 common)
Symbol
V
V
V
P
T
CBO
CEO
V
EBO
C
I
T
Symbol
stg
C
CE (sat)
I
j
I
(Note)
C
CBO
EBO
h
R1
FE
ob
V
V
V
I
V
C
−55~150
CB
EB
CE
CB
Rating
= −5 mA, I
−20
−20
−50
150
1
−5
50
= −20 V, I
= −5 V, I
= −5 V, I
= −10 V, I
Test Condition
B
C
C
E
E
= −0.25 mA
= 0
= −1 mA
= 0
= 0, f = 1 MHz
Unit
mW
mA
°C
°C
V
V
V
Equivalent Circuit
(top view)
Weight:0.001g (typ.)
RN2970FS,RN2971FS
JEDEC
JEITA
TOSHIBA
fS6
0.1±0.05
Q1
6
1
3.76
Min
300
8
1.EMIITTER1
2.EMITTER2
3.BASE2
4.COLLECTOR2
5.BASE1
6.COLLECTOR1
1
3
2
5
2
Typ.
1.2
4.7
10
1.0±0.05
0.8±0.05
Q2
4
3
2-1F1C
2004-04-14
−0.15
−100
−100
Max
5.64
12
4
6
5
(E1)
(E2)
(B2)
(C2)
(B1)
(C1)
Unit: mm
0.1±0.05
Unit
kΩ
nA
nA
pF
V

Related parts for RN2970FS(TPL3)

RN2970FS(TPL3) Summary of contents

Page 1

... TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2970FS,RN2971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch Small Mold (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. ...

Page 2

RN2970FS IC - VI(ON) -100 -10 Ta=100° -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -1 INPUT ON VOLTAGE VI(ON RN2971FS IC - VI(ON) -100 Ta=100°C - -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -1 ...

Page 3

IC RN2970FS 10000 1000 25 -25 100 EMITTER COMMON VCE=-5V 10 -0.1 -1 COLLECTOR CURRENT IC (mA) RN2971FS hFE - IC 10000 1000 25 -25 100 EMITTER COMMON VCE=-5V 10 -0.1 -1 COLLECTOR CURRENT IC (mA) ...

Page 4

Type Name 6 RN2970FS 1 6 RN2971FS 1 HANDLING PRECAUTION When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

Related keywords