RN4990FS(TPL3) Toshiba, RN4990FS(TPL3) Datasheet

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RN4990FS(TPL3)

Manufacturer Part Number
RN4990FS(TPL3)
Description
Digital Transistors 50mA 20volts 6Pin 4.7Kohms
Manufacturer
Toshiba
Datasheet

Specifications of RN4990FS(TPL3)

Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Package / Case
fS-6
Continuous Collector Current
50 mA, - 50 mA
Power Dissipation
50 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
R1: 4.7kΩ
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Q1
B
(Q1, Q2 common)
R1
Q1
C
E
6
1
(top view)
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
5
2
Q2
(PCT process) (Bias Resistor Built-in Transistor)
B
4
3
Q2
R1
RN4990FS
C
E
1
Marking
W9
Weight: 0.001g (typ.)
JEDEC
JEITA
TOSHIBA
fS6
0.1±0.05
Type name
1.EMIITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
1
3
2
1.0±0.05
0.8±0.05
RN4990FS
2-1F1D
2004-06-30
4
6
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
5
Unit: mm
0.1±0.05

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RN4990FS(TPL3) Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. ...

Page 2

Maximum Ratings (Ta = 25°C) (Q1) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Ratings (Ta = 25°C) (Q2) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Collector ...

Page 3

Electrical Characteristics (Ta = 25°C) (Q1) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Electrical Characteristics (Ta = 25°C) (Q2) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation ...

Page 4

VI(ON) 100 Ta=100° -25 1 EMITTER COMMON VCE=0.2V 0.1 0 INPUT VOLTAGE VI(ON) (V) hFE - IC 1000 -25 100 EMITTER COMMON VCE= COLLECTOR CURRENT IC (mA) 10000 1000 ...

Page 5

VI(ON) -100 -10 Ta=100° -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -1 -10 INPUT ON VOLTAGE VI(ON hFE - IC 10000 1000 25 -25 100 EMITTER COMMON VCE=-5V 10 -0.1 -1 -10 COLLECTOR CURRENT ...

Page 6

HANDLING PRECAUTION When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact ...

Page 7

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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