RN4987FS(TPL3) Toshiba, RN4987FS(TPL3) Datasheet

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RN4987FS(TPL3)

Manufacturer Part Number
RN4987FS(TPL3)
Description
Digital Transistors 10K x 47Kohms Polarity=NPN+PNP
Manufacturer
Toshiba
Datasheet

Specifications of RN4987FS(TPL3)

Transistor Polarity
NPN/PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
0.17
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 20 V
Continuous Collector Current
- 50 mA
Power Dissipation
50 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
- 6 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
Two devices are incorporated into a fine pitch small mold (6-pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and saves assembly cost.
Q1
R1: 10 kΩ
R2: 47 kΩ
(Q1, Q2 common)
B
R1
C
E
Q1
6
1
(top view)
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
5
2
Q2
(PCT process) (Bias Resistor Built-in Transistor)
B
4
3
Q2
R1
RN4987FS
C
E
1
Marking
W6
Weight: 0.001g (typ.)
JEDEC
JEITA
TOSHIBA
fS6
0.1±0.05
Type name
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLEECTOR1
1
3
2
1.0±0.05
0.8±0.05
RN4987FS
2-1F1D
2007-11-01
4
6
5
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Unit: mm
0.1±0.05

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RN4987FS(TPL3) Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into a fine pitch small mold (6-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 3

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Collector output capacitance Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input ...

Page 4

VI(ON) 100 Ta=100° -25 COMMON EMITTER VCE=0.2V 0.1 0.1 1 INPUT VOLTAGE VI(ON) (V) hFE - IC 1000 Ta=100°C -25 100 COMMON EMITTER VCE = COLLECTOR CURRENT IC (mA) 10000 ...

Page 5

VI(ON) -100 Ta=100°C - -25 EMITTER COMMON VCE= -0.2V -0.1 -0.1 -1 INPUT VOLTAGE VI(ON hFE - IC 1000 Ta=100°C -25 100 EMITTER COMMON VCE= - -10 COLLECTOR CURRENT IC (mA) -10000 -1000 ...

Page 6

Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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