PUMD30 T/R NXP Semiconductors, PUMD30 T/R Datasheet - Page 4

• Manufacturer Part Number: PUMD30 T/R
• Description: Digital Transistors TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PUMD30 T/R

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Mounting Style: SMD/SMT
• Package / Case: UMT-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PUMD30,115

Philips Semiconductors
7. Characteristics
PEMD30_PUMD30_1
Product data sheet
Table 8.
T
Symbol
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
FE
CEsat
c
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
Characteristics
TR1 (NPN)
TR2 (PNP)
NPN/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open
Rev. 01 — 31 March 2006
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CB
= 150 C
= 10 mA; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 10 V; I
C
C
E
B
B
B
E
= 0 A
= 20 mA
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
e
PEMD30; PUMD30
= 0 A;
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
-
-
-
30
-
1.54
-
-
Typ
-
-
-
-
-
-
2.2
-
-
Max
100
1
50
100
-
150
2.86
2.5
3
Unit
nA
nA
mV
k
pF
pF
4 of 11
A
A