PUMD30 T/R NXP Semiconductors, PUMD30 T/R Datasheet - Page 5

• Manufacturer Part Number: PUMD30 T/R
• Description: Digital Transistors TRNS DOUBL RET TAPE7
• Manufacturer: NXP Semiconductors

Specifications of PUMD30 T/R

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Mounting Style: SMD/SMT
• Package / Case: UMT-6
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PUMD30,115

Philips Semiconductors
PEMD30_PUMD30_1
Product data sheet
Fig 1. TR1 (NPN): DC current gain as a function of
Fig 3. TR2 (PNP): DC current gain as a function of
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
h
FE
FE
500
400
300
200
100
500
400
300
200
100
0
0
10
V
collector current; typical values
V
collector current; typical values
10
amb
amb
amb
amb
amb
amb
CE
CE
1
1
= 5 V
= 5 V
= 100 C
= 25 C
= 40 C
= 100 C
= 25 C
= 40 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
NPN/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open
I
I
C
C
006aaa696
(mA)
006aaa691
(mA)
10
10
Rev. 01 — 31 March 2006
2
2
Fig 2. TR1 (NPN): Collector-emitter saturation voltage
Fig 4. TR2 (PNP): Collector-emitter saturation voltage
V
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
CEsat
CEsat
(V)
(V)
10
10
10
10
1
1
1
2
10
1
2
I
as a function of collector current; typical values
10
I
as a function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
1
B
B
1
= 20
= 20
= 100 C
= 25 C
= 40 C
= 100 C
= 25 C
= 40 C
PEMD30; PUMD30
1
1
(1)
(2)
(3)
(1)
(2)
(3)
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
10
10
I
I
C
C
(mA)
(mA)
006aaa697
006aaa692
10
10
2
2
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