IDB09E120 Infineon Technologies, IDB09E120 Datasheet - Page 4

• Manufacturer Part Number: IDB09E120
• Description: Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 1200V 9A
• Manufacturer: Infineon Technologies

Specifications of IDB09E120

• Product: Power Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 9 A
• Max Surge Current: 50 A
• Configuration: Single
• Recovery Time: 140 ns
• Forward Voltage Drop: 2.15 V
• Maximum Reverse Leakage Current: 100 uA
• Maximum Power Dissipation: 69 W
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packages: PG-TO263-3
• If (typ): 9.0 A
• If (max): 23.0 A
• If,sm (max): 50.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.2.2
1 Power dissipation
P
parameter: T j ≤ 150 °C
3 Typ. diode forward current
I
F
tot
= f (V
W
A
= f (T
70
50
40
30
20
10
27
21
18
15
12
0
9
6
3
0
25
0
F
)
C
)
0.5
50
1
75
-55°C
25°C
100°C
150°C
1.5
100
2
°C
V
V
T
F
C
150
3
Page 4
2 Diode forward current
I
parameter: T
4 Typ. diode forward voltage
V
F
F
= f(T
= f (T
A
V
2.6
2.2
1.8
1.6
1.4
1.2
25
15
10
5
0
2
-60
25
C
)
j
)
-20
j
50
≤ 150°C
20
18A
9A
4,5A
75
60
100
IDB09E120
2007-09-01
100
°C
°C
T
T
j
C
160
150