IDB09E120 Infineon Technologies, IDB09E120 Datasheet - Page 5

• Manufacturer Part Number: IDB09E120
• Description: Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 1200V 9A
• Manufacturer: Infineon Technologies

Specifications of IDB09E120

• Product: Power Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 9 A
• Max Surge Current: 50 A
• Configuration: Single
• Recovery Time: 140 ns
• Forward Voltage Drop: 2.15 V
• Maximum Reverse Leakage Current: 100 uA
• Maximum Power Dissipation: 69 W
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Packages: PG-TO263-3
• If (typ): 9.0 A
• If (max): 23.0 A
• If,sm (max): 50.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.2.2
5 Typ. reverse recovery time
t
parameter: V
7 Typ. reverse recovery current
I
parameter: V
rr
rr
= f (di
= f (di
ns
A
690
590
540
490
440
390
340
290
240
190
140
90
21
17
15
13
11
200
9
7
5
200
F
F
/dt)
/dt)
300
300
R
R
400
400
= 800V, T
= 800V, T
500
500
600
600
j
18A
9A
4,5A
j
= 125°C
= 125°C
700
700
18A
9A
4,5A
800
800
A/µs
A/µs
di
di
F
F
/dt
/dt
1000
1000
Page 5
6 Typ. reverse recovery charge
Q
parameter: V
8 Typ. reverse recovery softness factor
S = f(di
parameter: V
rr
nC
=f(di
2000
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
18
14
12
10
200
8
6
4
2
200
F
F
/dt)
/dt)
300
300
R
R
18A
9A
4,5A
400
400
= 800V, T
= 800V, T
500
500
600
600
j
j
= 125 °C
= 125°C
18A
9A
4,5A
700
700
IDB09E120
2007-09-01
800
800
A/µs
A/µs
di
di
F
F
/dt
/dt
1000
1000