IDB04E120 Infineon Technologies, IDB04E120 Datasheet - Page 2

• Manufacturer Part Number: IDB04E120
• Description: Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 1200V 4A
• Manufacturer: Infineon Technologies

Specifications of IDB04E120

• Product: Power Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 4 A
• Max Surge Current: 28 A
• Configuration: Single
• Recovery Time: 115 ns
• Forward Voltage Drop: 2.15 V
• Maximum Reverse Leakage Current: 100 uA
• Maximum Power Dissipation: 43.1 W
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Package / Case: TO-220-3
• Packages: PG-TO263-3
• If (typ): 4.0 A
• If (max): 11.2 A
• If,sm (max): 28.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Electrical Characteristics, at T
Parameter
Static Characteristics
Reverse leakage current
V
V
Forward voltage drop
I
I
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
F
F
R
R
=4A, T
=4A, T
=1200V, T
=1200V, T
2
j
j
=25°C
=150°C
cooling area
j
j
=25°C
=150°C
1)
j
= 25 °C, unless otherwise specified
Page 2
Symbol
R
R
R
Symbol
I
V
R
F
thJC
thJA
thJA
min.
min.
-
-
-
-
-
-
-
-
Values
Values
1.65
typ.
typ.
1.7
35
-
-
-
-
-
max.
max.
IDB04E120
2.15
100
350
2.9
2007-09-01
62
62
-
-
Unit
K/W
Unit
µA
V