IDB04E120 Infineon Technologies, IDB04E120 Datasheet - Page 3

• Manufacturer Part Number: IDB04E120
• Description: Diodes (General Purpose, Power, Switching) FAST SWITCH EMCON DIODE 1200V 4A
• Manufacturer: Infineon Technologies

Specifications of IDB04E120

• Product: Power Diodes
• Peak Reverse Voltage: 1200 V
• Forward Continuous Current: 4 A
• Max Surge Current: 28 A
• Configuration: Single
• Recovery Time: 115 ns
• Forward Voltage Drop: 2.15 V
• Maximum Reverse Leakage Current: 100 uA
• Maximum Power Dissipation: 43.1 W
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Package / Case: TO-220-3
• Packages: PG-TO263-3
• If (typ): 4.0 A
• If (max): 11.2 A
• If,sm (max): 28.0 A
• Vf (typ): 1.65 V
• Ir (max): 100.0 µA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Reverse recovery time
V
V
V
Peak reverse current
V
V
V
Reverse recovery charge
V
V
V
Reverse recovery softness factor
V
V
V
Rev.2.2
R
R
R
R
R
R
R
R
R
R
R
R
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
=800V, I
F
F
F
F
F
F
F
F
F
F
F
F
=4A, di
=4A, di
=4A, di
=4A, di
=4A, di
=4A, di
=4A, di
= 4 A, di
=4A, di
=4A, di
=4A, di
=4A, di
F
F
F
F
F
F
F
F
F
F
F
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
F
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
/dt=750A/µs, T
j
j
j
j
j
j
j
=25°C
=125°C
=150°C
=25°C
=25°C
=125°C
=150°C
j
j
j
j
=125°C
=150°C
=125°C
=150°C
j
=25°C
j
= 25 °C, unless otherwise specified
Page 3
Symbol
t
I
Q
S
rr
rrm
rr
min.
-
-
-
-
-
-
-
-
-
-
-
-
Values
7.15
115
180
185
330
575
630
typ.
8.1
7.8
7.8
8
6
max.
IDB04E120
2007-09-01
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
A
nC