BSM25GB120DN2 Infineon Technologies, BSM25GB120DN2 Datasheet - Page 3

• Manufacturer Part Number: BSM25GB120DN2
• Description: IGBT Modules 1200V 25A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM25GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 38 A
• Gate-emitter Leakage Current: 180 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge1
• Ic (max): 25.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 25 GB 120 DN2
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
di
Reverse recovery charge
I
di
T
T
F
F
F
F
CC
CC
CC
CC
j
j
Gon
Gon
Goff
Goff
F
F
= 25 A, V
= 25 A, V
= 25 A, V
= 25 A, V
= 25 °C
= 125 °C
/dt = -800 A/µs, T
/dt = -800 A/µs
= 600 V, V
= 600 V, V
= 600 V, V
= 600 V, V
= 47
= 47
= 47
= 47
GE
GE
R
R
= -600 V, V
= -600 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 0 V
= 0 V
= 25 A
= 25 A
= 25 A
= 25 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
Values
typ.
75
65
420
50
2.3
1.8
0.13
2.3
6
max.
-
-
-
-
150
130
600
75
2.8
Oct-20-1997
Unit
ns
V
µs
µC