BSM25GB120DN2 Infineon Technologies, BSM25GB120DN2 Datasheet - Page 7

• Manufacturer Part Number: BSM25GB120DN2
• Description: IGBT Modules 1200V 25A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM25GB120DN2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 38 A
• Gate-emitter Leakage Current: 180 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: Half Bridge1
• Ic (max): 25.0 A
• Vce(sat) (typ): 2.5 V
• Technology: IGBT2 Standard
• Housing: 34 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 25 GB 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
C
ns
10
C
) , inductive load , T
CE
CE
8
7
6
5
4
3
2
1
0
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
10
10
20
20
GE
GE
= ± 15 V, R
= ± 15 V, R
30
30
j
j
= 125°C
= 125°C
40
40
G
G
= 47
= 47
A
A
tdoff
tdon
tr
tf
I
Eon
Eoff
I
C
C
60
60
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
ns
10
G
CE
CE
8
7
6
5
4
3
2
1
0
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
20
20
40
40
60
60
GE
GE
= ± 15 V, I
= ± 15 V, I
80
80
j
100 120 140
100 120 140
j
= 125°C
= 125°C
C
C
= 25 A
= 25 A
Oct-20-1997
tdoff
tdon
tr
tf
R
Eon
Eoff
R
G
G
180
180