FZ1200R12KF4 Infineon Technologies, FZ1200R12KF4 Datasheet - Page 2

• Manufacturer Part Number: FZ1200R12KF4
• Description: IGBT Modules 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KF4

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 7.8 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Standard
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Kollektor-Emitter-Sperrspannung
Kollektor-Dauergleichstrom
Periodischer Kollektor Spitzenstrom
Gesamt-Verlustleistung
Gate-Emitter-Spitzenspannung
Dauergleichstrom
Periodischer Spitzenstrom
Isolations-Prüfspannung
Kollektor-Emitter Sättigungsspannung
Gate-Schwellenspannung
Eingangskapazität
Kollektor-Emitter Reststrom
Gate-Emitter Reststrom
Emitter-Gate Reststrom
Einschaltzeit (induktive Last)
Speicherzeit (induktive Last)
Fallzeit (induktive Last)
Einschaltverlustenergie pro Puls
Abschaltverlustleistung pro Puls
Inversdiode / Inverse diode
Durchlaßspannung
Rückstromspitze
Sperrverzögerungsladung
Innerer Wärmewiderstand
Übergangs-Wärmewiderstand
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
Innere Isolation
Anzugsdrehmoment f. mech. Befestigung
Anzugsdrehmoment f. elektr. Anschlüsse
Gewicht
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values: Transistor
Charakteristische Werte / Characteristic values
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
t
v
R
t
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions
FZ 1200 R 12 KF4
fg
vj
L
GF
= 125°C
= 10 µs
= ±15 V
= R
GR
= 0,82
collector-emitter voltage
DC-collector current
repetitive peak collctor current
total power dissipation
gate-emitter peak voltage
DC forward current
repetitive peak forw. current
insulation test voltage
collector-emitter saturation voltage
gate threshold voltage
input capacity
collector-emitter cut-off current
gate leakage current
gate leakage current
turn-on time (inductive load)
storage time (inductive load)
fall time (inductive load)
turn-on energy loss per puls
turn-off energy loss per puls
forward voltage
peak reverse recovery current
recovered charge
thermal resistance, junction to case
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
internal insulation
mounting torque
terminal connection torque
weight
V
v
i
i
CMK1
CMK2
CEM
CC
= 750 V
= 900 V
10000 A
8000 A
t
t
t
RMS, f=50 Hz, t= 1 min.
i
i
i
f
v
v
v
v
i
vL = ±15V, R
vL = ±15V, R
i
vL = ±15V, R
vL = ±15V, R
i
vL = ±15V, R
vL = ±15V, R
i
v
i
v
i
i
i
i
Transistor / transistor, DC
Transistor,DC,pro Zweig/per arm
pro Modul / per Module
pro Modul / per Module
Transistor / transistor
terminals M6 /
terminals M4 /
terminals M8
p
C
p
C
C
C
O
C
C
C
C
C
F
F
F
-di
F
-di
CE
CE
CE
CE
L
L
=1 ms
=1ms
=1,2kA, v
=1,2kA, v
=1,2kA, v
=1,2kA, v
=1,2kA, v
=1,2kA, v
=48mA, v
=1,2kA,v
=1,2kA,v
=1,2kA,v
=1,2kA, v
=1,2kA, v
=25°C, Transistor /transistor
=1MHz,t
=±15V,R
=±15V,R
=1200V, v
=1200V, v
=0V, v
=0V, v
F
F
/dt = 6 kA/µs, t
/dt = 6 kA/µs, t
GE
EG
vj
CE
CE
CE
G
G
GE
GE
CE
CE
GE
GE
RM
RM
CE
=25°C,v
=20V, t
=20V, t
=0,82 ,T
=0,82 ,T
=600V
=600V
=600V
=600V, L
=600V, L
=0V, t
=0V, t
=600V, v
=600V, v
=15V, t
=15V, t
=v
GE
GE
v
G
G
G
G
G
G
tolerance +/-15%
tolerance +/-15%
CEM
= 0,82 , t
= 0,82 , t
= 0,82 , t
= 0,82 , t
= 0,82 , t
= 0,82 , t
=0V, t
=0V, t
GE
, t
t
t
= V
vj
vj
vj
vj
vj
vj
vj
vj
CE
vj
=25°C
=25°C
=25°C
=125°C
vj
vj
= 25°C
= 125°C
= 25°C
= 125°C
=25°C
=25°C
=125°C
=25V, v
vj
vj
vj
vj
EG
EG
s
s
=25°C
=125°C
CES
=125°C
=125°C
=70nH
=70nH
= 10V
= 10V
vj
vj
vj
vj
vj
vj
=25°
=125°
=25°
=125°
=25°
=125°
- 15nH x |di
GE
=0V
c
/dt|
V
I
I
P
V
I
I
V
v
v
C
i
i
i
t
t
t
E
E
v
I
Q
R
R
t
t
t
M1
M2
G
C
CRM
F
FRM
CES
GES
EGS
on
s
f
RM
vj max
c op
stg
CE sat
GE(th)
F
CES
tot
GE
ISOL
ies
on
off
thJC
thCK
r
-
min.
4,5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0,10
0,15
100
170
190
400
700
150
typ.
2,7
3,3
5,5
0,7
0,8
0,9
1,0
2,2
2,0
90
16
50
-
-
-40...+125 °C
-40...+125 °C
ca. 1500 g
0,016 °C/W
0,032 °C/W
0,008 °C/W
AI
8...10 Nm
1200 V
1200 A
2400 A
7800 W
1200 A
2400 A
max.
± 20 V
200 mA
400 nA
400 nA
150 °C
2
2,5 kV
3,2 V
3,9 V
6,5 V
2,7 V
2,5 V
O
5 Nm
2 Nm
3
- nF
- mA
- µs
- µs
- µs
- µs
- µs
- µs
- mWs
- mWs
- A
- A
- µAs
- µAs