FZ1200R12KF4 Infineon Technologies, FZ1200R12KF4 Datasheet - Page 3

• Manufacturer Part Number: FZ1200R12KF4
• Description: IGBT Modules 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KF4

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 7.8 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Standard
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

i
[ A ]
C
i
[ A ]
C
2500
2000
1500
1000
2000
1500
1000
2500
500
500
0
0
1.0
5
FZ1200R12KF4
Bild/Fig. 1
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
V
----- T
___ Tvj = 125 °C
FZ1200R12KF4
Bild/Fig. 3
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
V
GE
CE
= 15V
= 20 V
vj
= 25 °C
1.5
6
2.0
7
2.5
8
3.0
9
125 °C
25 °C
3.5
t
vj
=
10
4.0
v
v
CE
GE
[ V ]
[ V ]
11
4.5
5.0
12
i
[ A ]
i
[ A ]
C
C
2500
2000
1500
1000
2500
2000
1500
1000
500
500
0
0
1.0
0
FZ1200R12KF4
Bild/Fig. 2
Kollektor-Emitter-Spannung im Sättigungsbereich (typisch)
Collector-emitter-voltage in saturation region (typical)
Tvj = 125 °C
FZ1200R12KF4
Bild/Fig. 4
Rückwärts-Arbeitsbereich
Reverse biased safe operating area
t
vj
= 125 °C, v
1.5
200
LF
= v
2.0
LR
400
= 15 V, R
2.5
600
G
= 0,82
3.0
800
FZ 1200 R12 KF4
3.5
1000
4.0
v
v
CE
V GE =20V
CE
[ V ]
[ V ]
1200
4.5
15V
1400
10V
12V
9V
8V
5.0