BSM50GD120DN2G Infineon Technologies, BSM50GD120DN2G Datasheet - Page 5

• Manufacturer Part Number: BSM50GD120DN2G
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM50GD120DN2G

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 78 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 50 GD 120 DN2G
Typ. output characteristics
I
Typ. transfer characteristics
I
C
parameter: t
C
parameter: t
I
I
C
C
= f (V
= f (V
100
100
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
A
A
0
0
CE
GE
0
0
)
)
p
p
2
17V
15V
13V
11V
9V
7V
= 80 µs, V
= 80 µs, T
1
4
2
6
CE
j
= 25 °C
= 20 V
8
3
10
V
V
V
V
CE
GE
14
5
5
Typ. output characteristics
I
C
parameter: t
I
C
= f (V
100
80
70
60
50
40
30
20
10
A
0
CE
0
)
p
17V
15V
13V
11V
9V
7V
= 80 µs, T
1
2
j
= 125 °C
3
Oct-01-2003
V
V
CE
5