BSM50GD120DN2G Infineon Technologies, BSM50GD120DN2G Datasheet - Page 9

• Manufacturer Part Number: BSM50GD120DN2G
• Description: IGBT Modules 1200V 50A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM50GD120DN2G

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 78 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 50 GD 120 DN2G
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 300 g
9
Oct-01-2003