FZ1200R17KE3_B2 Infineon Technologies, FZ1200R17KE3_B2 Datasheet - Page 2

• Manufacturer Part Number: FZ1200R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 1.9KA
• Manufacturer: Infineon Technologies

Specifications of FZ1200R17KE3_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1900 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
=
4
4
=
A
7h
4
O
'
<
7
c
B
&
&
(
(
B
(
&
H & B
(
'
(
'
(
(
H & B
(
&
(
B
6 `
6
(
=
(
&
(
(
FZ1200R17KE3_B2
(
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/? ,
7g , "
7g , "
7g , "
/? , ;
/D1 , "- /
7g , "
/? , ;
/D1 , "- /
7g , "
/? , ;
/D1 , "- /
d>JICS , "
> , " &
4
4
/6 > , " & 6 )*+ , " -.
/
/
/
<6 /D1 ,
<6 /D1 ,
<6
<6
<6
F
#
FV&_$W F
gF
gF
gF
, 3
, 3
, 3
/
/
deUSJIS , "
2
! ""
<FN
<FN
<FN
FV&_$W
)*+ , -.
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)*+ , " -.
)*+ , -.
)*+ , " -.
Vorläufige Daten
preliminary data
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/??@
OCKb0
7g?@
%USi
7?@
/g
MU
7h
7g
& #
"3
"
"
"-
"6L
"63
!--
-;-
!6
!-
-
#
& G#
6
36
$F
$F
N
N
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&[
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/
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<
/
/
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