FZ1200R17KE3_B2 Infineon Technologies, FZ1200R17KE3_B2 Datasheet - Page 7

• Manufacturer Part Number: FZ1200R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 1.9KA
• Manufacturer: Infineon Technologies

Specifications of FZ1200R17KE3_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1900 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FZ1200R17KE3_B2
#
7
! ""
Vorläufige Daten
preliminary data