BSM100GD120DLC Infineon Technologies, BSM100GD120DLC Datasheet - Page 4

• Manufacturer Part Number: BSM100GD120DLC
• Description: IGBT Modules 1200V 100A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM100GD120DLC

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 650 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
VGE = 7V
Tj = 25°C
Tj = 125°C
1,0
BSM100GD120DLC
1,5
1,5
2,0
V
V
CE
CE
2,0
2,5
4(8)
[V]
[V]
3,0
2,5
V
I
GE
C
= f (V
= 15V
3,5
I
C
T
vj
= f (V
CE
= 125°C
3,0
)
4,0
CE
)
3,5
4,5
Seriendatenblatt_BSM100GD120DLC.xls
4,0
5,0