BSM100GD120DLC Infineon Technologies, BSM100GD120DLC Datasheet - Page 7

• Manufacturer Part Number: BSM100GD120DLC
• Description: IGBT Modules 1200V 100A 3-PHASE
• Manufacturer: Infineon Technologies

Specifications of BSM100GD120DLC

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 650 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
240
200
160
120
80
40
0
Transienter Wärmewiderstand
Transient thermal impedance
0
r
r
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
IC,Modul
IC,Chip
200
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM100GD120DLC
400
21,25
0,002
47,11
0,002
0,1
1
600
7(8)
V
124,78
64,32
CE
0,03
0,03
800
2
t [sec]
[V]
1
Z
thJC
V
GE
= 15V, R
1000
= f (t)
136,14
Zth:Diode
Zth:IGBT
83,81
0,066
0,072
3
g
10
= 5,6 Ohm, T
1200
20,62
1,655
51,97
0,682
vj
4
= 125°C
1400
Seriendatenblatt_BSM100GD120DLC.xls
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