FZ200R65KF1 Infineon Technologies, FZ200R65KF1 Datasheet - Page 7

• Manufacturer Part Number: FZ200R65KF1
• Description: IGBT Modules N-CH 6.3KV 400A
• Manufacturer: Infineon Technologies

Specifications of FZ200R65KF1

• Configuration: Single Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 6300 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHV73

IGBT-Module
IGBT-Modules
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
Technische Information / Technical Information
450
400
350
300
250
200
150
100
450
400
350
300
250
200
150
100
50
50
0
Sicherer Arbeitsbereich Diode (SOA)
safe operation area Diode (SOA)
0
2000
0
2500
1000
3000
Tvj=125°C
Tvj=25°C
2000
FZ 200 R 65 KF1
3500
V
V
CE
R
[V] (at auxiliary terminals)
[V] (at auxiliary terminals)
4000
3000
R
G,off
7
4500
= 75 , C
4000
P
GE
max
=22nF, V
5000
= 600kW ;
GE
=±15V, T
5500
5000
T
vj
vj
= 125°C
= <see inset>, V
6000
6000
6500
CC
<=4400V
FZ 200 R65 KF1 (final 1).xls