BSM150GT120DN2 Infineon Technologies, BSM150GT120DN2 Datasheet - Page 9

• Manufacturer Part Number: BSM150GT120DN2
• Description: IGBT Modules 1200V 150A TRIPACK
• Manufacturer: Infineon Technologies

Specifications of BSM150GT120DN2

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 320 nA
• Power Dissipation: 1.25 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: EconoPACK 3A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BSM 150 GT 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 300 g
9
Aug-23-1996
Semiconductor Group