SKB02N120 Infineon Technologies, SKB02N120 Datasheet - Page 11

• Manufacturer Part Number: SKB02N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 2A
• Manufacturer: Infineon Technologies

Specifications of SKB02N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB02N120XT

SKB02N120
PG-TO263-3-2
Power Semiconductors
11
Rev. 2.3
Oct 07