SKB02N120 Infineon Technologies, SKB02N120 Datasheet - Page 9

• Manufacturer Part Number: SKB02N120
• Description: IGBT Transistors FAST IGBT NPT TECH 1200V 2A
• Manufacturer: Infineon Technologies

Specifications of SKB02N120

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-263-3
• Continuous Collector Current Ic Max: 6.2 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: D2PAK (TO-263)
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 6.2 A
• Ic(max) @ 100°: 2.8 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKB02N120XT

Power Semiconductors
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
250ns
200ns
150ns
100ns
R
R
50ns
10A
0ns
= 800V, T
= 800V, T
8A
6A
4A
2A
0A
100A/ s
100A/ s
d i
d i
F
F
I
F
/ d t,
/ d t,
=1A
j
j
= 150 C,
= 150 C,
200A/ s
200A/ s
I
F
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
=1A
300A/ s
300A/ s
I
F
=2A
400A/ s
400A/ s
I
F
=2A
9
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
dynamic test circuit in Fig.E )
400A/ s
300A/ s
200A/ s
100A/ s
0.4µC
0.3µC
0.2µC
0.1µC
0.0µC
R
0A/ s
R
= 800V, T
= 800V, T
100A/ s
100A/ s
d i
di
F
F
/ d t,
/dt,
j
j
200A/ s
= 150 C,
= 150 C,
200A/ s
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
=1A
SKB02N120
300A/ s
I
300A/ s
F
=1A
Rev. 2.3
I
F
=2A
400A/ s
400A/ s
I
F
=2A
Oct 07