IGP30N60T Infineon Technologies, IGP30N60T Datasheet
IGP30N60T
Specifications of IGP30N60T
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IGP30N60T Summary of contents
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... V T Marking Code CE(sat),Tj=25°C j,max 1.5V G30T60 175 C 1.5V G30T60 175 C Symbol V I jmax C I jmax 600V, T 175 IGP30N60T IGW30N60T G PG-TO-220-3-1 PG-TO-247-3 Package PG-TO-220-3-1 PG-TO-247-3 Value 600 187 -40...+175 j -55...+175 260 Rev. 2.6 Nov Unit ...
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... =20V =20V, I =30A =25V f=1MHz =30A =15V PG- TO- 220- 3-1 E PG- TO- 247- 3- =15V 400 IGP30N60T IGW30N60T Max. Value Unit 0.80 K Value Unit min. typ. max. 600 - - V - 1.5 2.05 - 1.9 - 4.1 4.9 5.7 µ 1000 - - 100 Ω - 1630 - pF - 108 - - 167 - ...
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... =175 C j Symbol Conditions 175 V,I =30A 36nH =39pF Energy losses include E “tail” and diode reverse recovery IGP30N60T IGW30N60T Value Unit min. Typ. max 254 - - 0. 0. 1.46 - Value Unit min. Typ. max 292 - - 1.0 ...
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... Figure 2. Safe operating area ( 400V, CE 50A 40A 30A 20A 10A 0A 25°C Figure 4. Collector current as a function of case temperature (V 4 IGP30N60T IGW30N60T t =2µs p 10µs 50µs 1ms 10ms DC 10V 100V 1000V - COLLECTOR EMITTER VOLTAGE = 175 =15V) GE 75°C 125° ...
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... CE Power Semiconductors ® TrenchStop Series 50A 40A 30A 20A 10A Figure 6. Typical output characteristic 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0° Figure 8. Typical collector-emitter 5 IGP30N60T IGW30N60T =20V 15V 13V 11V COLLECTOR EMITTER VOLTAGE 175° 50°C 100°C 150° ...
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... Figure 10. Typical switching times 10Ω d(off in -50°C Figure 12. Gate-emitter threshold voltage as = 400V, =10Ω IGP30N60T IGW30N60T t d(off GATE RESISTOR G function of gate resistor (inductive load 175° 400V 0/15V 30A Dynamic test circuit in Figure E) m ax. typ. 0°C 50°C 100° ...
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... Figure 14. Typical switching energy losses = 175°C, = 10Ω 2.5m J 2.0m J 1.5m J 1.0m J 0.5m J 0.0m J 300V Figure 16. Typical switching energy losses = 400V, = 10Ω IGP30N60T IGW30N60T *) lud ery GATE RESISTOR function of gate resistor (inductive load 175° 400V 0/15V 30A, ...
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... V , GATE GE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (V =600V, start Jmax 8 IGP30N60T IGW30N60T C iss C oss C rss 20V 30V 40V - EMITTER VOLTAGE 12V 13V 14V - EMITETR VOLTAGE =25°C, J <150°C) Rev. 2.6 Nov. 09 ...
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... K 0.29566 0.05 0.25779 0.19382 0.05279 R 0. K/W C single pulse 1µs 10µs 100µs 1ms t , PULSE WIDTH P Figure 21. IGBT transient thermal resistance ( Power Semiconductors ® TrenchStop Series , ( 6.478*10 -3 6.12*10 -4 4.679*10 -5 6.45* 10ms 100ms 9 IGP30N60T IGW30N60T Rev. 2.6 Nov. 09 ...
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... PG-TO-220-3-1 Power Semiconductors IGW30N60T ® TrenchStop Series 10 IGP30N60T Rev. 2.6 Nov. 09 ...
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... Power Semiconductors IGW30N60T ® TrenchStop Series 11 IGP30N60T Rev. 2.6 Nov. 09 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IGW30N60T ® TrenchStop Series i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit 12 IGP30N60T Rev. 2.6 Nov. 09 ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IGW30N60T ® TrenchStop Series 13 IGP30N60T Rev. 2.6 Nov. 09 ...