IGP30N60T Infineon Technologies, IGP30N60T Datasheet - Page 3

• Manufacturer Part Number: IGP30N60T
• Description: IGBT Transistors LOW LOSS IGBT TECH 600V 30A
• Manufacturer: Infineon Technologies

Specifications of IGP30N60T

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220AB-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-220
• Vce (max): 600.0 V
• Ic(max) @ 25°: 60.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
1)
2)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E.
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
j
j
=25 C
=175 C
3
TrenchStop Series
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
j
j
C C
G E
C C
G E
G
G
= 25 C ,
= 175 C ,
1 )
1 )
1 )
1 )
= 1 0 .6
= 1 0 .6
= 40 0 V,I
= 0 /1 5 V,
= 40 0 V,I
= 0 /1 5 V,
=1 36nH,
=1 36nH,
=39pF
=39pF
Conditions
Conditions
,
®
C
C
=30A,
=30A,
2)
2)
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGW30N60T
IGP30N60T
Value
Value
Typ.
Typ.
0.69
0.77
1.46
254
292
1.0
1.1
2.1
23
21
46
24
26
90
Rev. 2.6 Nov. 09
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
Unit
ns
mJ