AM29DL323GB90EI AMD (ADVANCED MICRO DEVICES), AM29DL323GB90EI Datasheet - Page 26

• Manufacturer Part Number: AM29DL323GB90EI
• Description: Flash Memory IC
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29DL323GB90EI

• Memory Configuration: 4M X 8 / 2M X 16 Bit
• Supply Voltage Max: 3.6V
• Access Time, Tacc: 90nS
• Mounting Type: Surface Mount
• Supply Voltage: 3V

Refer to the Write Operation Status section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the Re-
sume command are ignored. Another Erase Suspend
command can be written after the chip has resumed
erasing.
26
A D V A N C E
Am29DL32xG
I N F O R M A T I O N
Notes:
1. See Table 13 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
No
Figure 4. Erase Operation
Command Sequence
Data Poll to Erasing
Erasure Completed
Bank from System
Write Erase
Data = FFh?
(Notes 1, 2)
START
Yes
Embedded
Erase
algorithm
in progress
March 26, 2004