AM29DL323GB90EI AMD (ADVANCED MICRO DEVICES), AM29DL323GB90EI Datasheet - Page 28

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AM29DL323GB90EI

Manufacturer Part Number
AM29DL323GB90EI
Description
Flash Memory IC
Manufacturer
AMD (ADVANCED MICRO DEVICES)

Specifications of AM29DL323GB90EI

Memory Configuration
4M X 8 / 2M X 16 Bit
Supply Voltage Max
3.6V
Access Time, Tacc
90nS
Mounting Type
Surface Mount
Supply Voltage
3V

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29DL323GB90EI
Manufacturer:
TDK
Quantity:
14 000
grammed cell margin. Table 14 shows the address and
data requirements for the byte program command se-
quence.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Write Operation
Status section for information on these status bits.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
DQ6 status bits to indicate the operation was success-
ful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time. Table 14 shows the require-
ments for the command sequence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need
only contain the data 00h. The bank then returns to
the read mode.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
V
ters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
26
HH
on the WP#/ACC pin, the device automatically en-
D A T A
Am29DL32xG
S H E E T
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at V
other than accelerated programming, or device dam-
age may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Figure 3 illustrates the algorithm for the program oper-
ation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 17 for timing diagrams.
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 14
Note: See Table 14 for program command sequence.
Increment Address
Figure 3. Program Operation
Embedded
in progress
algorithm
Program
No
25686B10 December 4, 2006
Command Sequence
Write Program
Last Address?
Programming
from System
Verify Data?
Completed
Data Poll
START
HH
Yes
Yes
any operation
No

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