CY14E256LA-SZ25XIT Cypress Semiconductor Corp, CY14E256LA-SZ25XIT Datasheet - Page 6

• Manufacturer Part Number: CY14E256LA-SZ25XIT
• Description: CY14E256LA-SZ25XIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14E256LA-SZ25XIT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256K (32K x 8)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AN55663
Power up Recall Related Improvements
Additional parameters are specified in CY14E256LA such as HSB Output Disable Voltage (V
), HSB To Output Active
HDIS
Time (t
), and HSB High Active Time (t
) which helps in system design. Refer to
Figure 3
and
Figure 4
for the
LZHSB
HHHD
definition of the additional specs in power up. Also, note that HSB remains low until the end of the power up in the new part.
This would guard against the system inadvertently thinking the part has completed the boot up prior to real completion.
Figure 3. CY14E256L/STK14C88: Power Up Recall
Figure 4. CY14E256LA: Power Up Recall
October 5, 2009
Document No. 001-55663 Rev. **
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