CY62128EV30LL-45ZXIT Cypress Semiconductor Corp, CY62128EV30LL-45ZXIT Datasheet - Page 5
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CY62128EV30LL-45ZXIT
Manufacturer Part Number
CY62128EV30LL-45ZXIT
Description
CY62128EV30LL-45ZXIT
Manufacturer
Cypress Semiconductor Corp
Specifications of CY62128EV30LL-45ZXIT
Format - Memory
RAM
Memory Type
SRAM
Memory Size
1M (128K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP I
Density
1Mb
Access Time (max)
45ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3V
Address Bus
17b
Package Type
TSOP-I
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
16mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62128EV30LL-45ZXIT
Manufacturer:
CRYSTAL
Quantity:
1 408
Part Number:
CY62128EV30LL-45ZXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Capacitance
Thermal Resistance
Data Retention Characteristics
(Over the Operating Range)
Note
Document #: 38-05579 Rev. *I
C
C
V
I
t
t
Parameter
Parameter
9. Tested initially and after any design or process changes that may affect these parameters.
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
11. Chip enables (CE
12. Full device AC operation requires linear V
CCDR
CDR
R
Parameter
DR
IN
OUT
[12]
[9]
[11]
JA
JC
OUTPUT
INCLUDING
[9]
[9]
V
JIG AND
CC
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
SCOPE
V
Data retention current
Chip deselect to data retention time
Operation recovery time
Input capacitance
Output capacitance
CC
1
30 pF
and CE
for data retention
Parameters
Description
Description
R
V
R1
R1
R2
2
TH
TH
) must be at CMOS level to meet the I
Description
R2
CC
Equivalent to:
ramp from V
Still air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
T
V
A
CC
Figure 4. AC Test Loads and Waveforms
= 25 °C, f = 1 MHz,
= V
OUTPUT
CC(typ)
DR
Test Conditions
Test Conditions
V
CE
V
to V
CC
IN
Rise Time = 1 V/ns
1
CC(min)
> V
SB2
> V
= 1.5 V,
THEVENIN
/ I
CC
CC
CCDR
> 100 µs or stable at V
16667
15385
GND
2.50V
8000
0.2 V or CE
0.2 V or V
1.20
V
CC
spec. Other inputs can be left floating.
EQUIVALENT
R
TH
10%
Conditions
IN
2
ALL INPUT PULSES
< 0.2 V
< 0.2 V,
CC(min)
V
TSOP I
90%
33.01
3.42
100 µs.
1103
1554
Max
3.0V
1.75
645
10
10
Industrial
CC
25.86
SOIC
48.67
= V
CY62128EV30 MoBL
90%
CC(typ)
10%
Fall Time = 1 V/ns
, T
A
Min
1.5
45
= 25 °C.
–
0
STSOP
32.56
3.59
Typ
–
–
–
–
Unit
Unit
[10]
pF
pF
V
Page 5 of 15
Max Unit
–
3
–
–
°C/W
°C/W
Unit
µA
ns
ns
V
®
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