CY62146ELL-45ZSXAT Cypress Semiconductor Corp, CY62146ELL-45ZSXAT Datasheet - Page 4

• Manufacturer Part Number: CY62146ELL-45ZSXAT
• Description: CY62146ELL-45ZSXAT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62146ELL-45ZSXAT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (256K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature................................. –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground potential .................–0.5 V to 6.0 V
DC voltage applied to outputs
in high Z state
DC input voltage
Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
Notes
Document Number: 001-07970 Rev. *G
V
V
V
V
I
I
I
I
C
C
3. V
4. V
5. Full Device AC operation assumes a minimum of 100 s ramp time from 0 to V
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
7. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
8. Tested initially after any design or process changes that may affect these parameters.
IX
OZ
CC
SB2
Parameter
Parameter
OH
OL
IH
IL
IN
OUT
Parameter
IL
IH
[7]


(min) = –2.0 V for pulse durations less than 20 ns for I < 30 mA.
(max) = V
JA
JC
[8]
[8]
CC
[3, 4]
Input capacitance
Output capacitance
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
+ 0.75 V for pulse durations less than 20 ns.
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input leakage current
Output leakage current GND < V
V
current
Automatic CE power
down current — CMOS
inputs
[3, 4]
CC
...........................................–0.5 V to 6.0 V
.......................................–0.5 V to 6.0 V
operating supply
Description
Description
Description
I
I
4.5 < V
4.5 < V
GND < V
f = f
f = 1 MHz
CE > V
f = 0, V
OH
OL
T
V
Still Air, soldered on a 3 × 4.5 inch, two layer
printed circuit board
A
CC
= 25 °C, f = 1 MHz,
= 2.1 mA
max
= –1.0 mA
= V
CC
CC
CC
CC
= 1/t
CC(typ)
I
O
< V
= V
< 5.5
< 5.5
– 0.2 V, V
< V
RC
CC
CC
CC(max)
, output disabled
Test Conditions
Test Conditions
Test Conditions
IN
> V
CC
(min) and 200 s wait time after V
CC
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage............................................ >2001 V
(MIL-STD-883, Method 3015)
Latch-up current ...................................................... >200 mA
Operating Range
V
I
OUT
CC
CY62146ELL
– 0.2 V or V
Device
= V
= 0 mA, CMOS levels
CCmax
SB2
/ I
IN
CCDR
< 0.2 V,
spec. Other inputs are left floating.
Industrial/
Range
Auto-A
CC
CC
= V
stabilization.
–0.5
CC(typ)
Min
2.4
2.2
–1
–1
–
–
–
–
45 ns (Ind’l/Auto-A)
–40 °C to +85 °C 4.5 V–5.5 V
TSOP II
CY62146E MoBL
Temperature
Max
, T
10
10
77
13
A
Ambient
Typ
= 25 °C.
15
–
–
–
–
–
–
2
1
[6]
V
CC
Max
0.4
0.8
2.5
+1
+1
20
–
7
Page 4 of 14
+ 0.5
C/W
C/W
Unit
Unit
pF
pF
V
CC
[5]
Unit
mA
A
A
A
V
V
V
V

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