CY62146ELL-45ZSXAT Cypress Semiconductor Corp, CY62146ELL-45ZSXAT Datasheet - Page 7

CY62146ELL-45ZSXAT

CY62146ELL-45ZSXAT

Manufacturer Part Number
CY62146ELL-45ZSXAT
Description
CY62146ELL-45ZSXAT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62146ELL-45ZSXAT

Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (256K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Waveforms
Notes
Document Number: 001-07970 Rev. *G
18. The device is continuously selected. OE, CE = V
19. WE is HIGH for read cycle.
20. Address valid before or similar to CE, BHE, BLE transition LOW.
DATA OUT
CURRENT
ADDRESS
BHE/BLE
SUPPLY
DATA OUT
ADDRESS
V
CE
OE
CC
PREVIOUS DATA VALID
HIGH IMPEDANCE
t
PU
Figure 4. Read Cycle No.1: Address Transition Controlled
t
LZCE
t
LZBE
t
t
ACE
LZOE
Figure 5. Read Cycle No. 2: OE Controlled
IL
t
DBE
, BHE, BLE, or both = V
t
OHA
50%
t
DOE
t
AA
t
RC
IL
.
t
RC
RC
DATA VALID
[19, 20]
[18, 19]
DATA VALID
t
CY62146E MoBL
HZBE
t
t
HZOE
HZCE
t
PD
50%
IMPEDANCE
Page 7 of 14
HIGH
I
I
CC
SB
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