CY62146ELL-45ZSXAT Cypress Semiconductor Corp, CY62146ELL-45ZSXAT Datasheet - Page 8

CY62146ELL-45ZSXAT

CY62146ELL-45ZSXAT

Manufacturer Part Number
CY62146ELL-45ZSXAT
Description
CY62146ELL-45ZSXAT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62146ELL-45ZSXAT

Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (256K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Waveforms
Notes
Document Number: 001-07970 Rev. *G
21. WE is HIGH for read cycle.
22. Data I/O is high impedance if OE = V
23. If CE goes HIGH simultaneously with WE = V
24. During this period, the I/Os are in output state. Do not apply input signals.
ADDRESS
ADDRESS
BHE/BLE
BHE/BLE
DATA I/O
DATA I/O
WE
WE
OE
OE
CE
CE
NOTE 24
NOTE 24
(continued)
IH
.
t
HZOE
t
SA
IH
Figure 6. Write Cycle No 1: WE Controlled
t
HZOE
, the output remains in a high impedance state.
Figure 7. Write Cycle 2: CE Controlled
t
SA
t
AW
t
AW
t
t
SCE
WC
t
WC
t
BW
t
BW
DATA
t
t
PWE
SD
DATA
t
t
PWE
SD
t
IN
SCE
IN
[21, 22, 23]
[21, 22, 23]
t
HD
t
HA
t
HA
t
CY62146E MoBL
HD
Page 8 of 14
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